sipower

SiPower International Inc.

  • Home
  • About us
  • Product
    • Component Device
      • Bridge
      • Schottky
      • MOSFET
      • IGBT
      • SIC Diode
    • Wafer Solutions
      • GaN Epitaxy Wafer
        • GaN on Si wafer
        • GaN on SiC wafer
      • Silicon Wafer
        • Substrate
  • Contact us
SOLUTION

Fully vertically integrated manufacturing Semiconductor device operation.

SiC

SiC Silicon Carbide wafer and Device is the foremost semiconductor material that can operate at higher temperature, power level, and voltage.

Automotive

Working design / Manufacturing / Sales / Application experts in power semiconductors field.

Previous Next

Component Device

Wafer Solutions

Taipei Office | 4F-5, No.58, Hsingshan Road,Neihu District,Taipei 11469,Taiwan

Tel - +886-2-2792-7800 | Fax - +886-2-2794-9800

Copyright ©2025 SiPower Inc. All rights reserved.