Gallium Nitride on Silicon Carbide wafer we can provide both wafer material 5F/RF and Power application, the Optional epi structure available: Fe-doped buffer layer/ In-situ SiN.Excellent electrical transport properties and High crystalline quality for the High performance.
|
4~6" GaN on SiC wafer |
Wafer specs |
|
|
GaN cap thickness |
2 |
nm |
|
AlGaN barrier thickness |
15~25 |
nm |
|
Al content of AlGaN barrier |
18~30 |
% |
|
AlN spacer thickness |
1 |
nm |
|
Epi total thickness |
~2500 |
nm |
|
Thickness uniformity |
<2 |
% |
|
Wafer bow |
±50 |
μm |
|
FWHM of GaN(002) |
<200 |
arcsec |
|
FWHM of GaN(102) |
<300 |
arcsec |
|
*All can be customizable |
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