Product

GaN on Si wafer

Gallium Nitride on Silicon wafer we can provide the wafer material for both 5F/RF and Power application, D-mode GaN-on-Si HEMT & E-mode GaN-on-Si HEMT with our Superlattice buffer and Multi-AlGaN buffer layers.

*Very low particle count

*Crack-free EPI wafer

*High lateral breakdown voltage

*Excellent thickness and composition uniformity

*High breakdown voltage and low leakage current characteristics

 


Wafer Size

4~6" GaN on Si wafer

Silicon thickness

675/1000

um

GaN cap thickness

2

nm

AlGaN barrier thickness

20~25

nm

Al content of AlGaN barrier

20~30

%

AlN spacer thickness

1

nm

Epi total thickness

<4000

nm

Wafer bow

±50

μm

FWHM of GaN(002)

<700

arcsec

FWHM of GaN(102)

<700

arcsec

*all can be customizable