Silicon wafer is the most common material and widely used for a variety of high-tech industries, including integrated circuits , detector or sensor device , MEMS fabrication, opto-electronic components, and solar cells .
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Silicon Wafer Specification |
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Diameter |
100- 300mm |
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Growth |
P-Type |
Boron |
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Dopant |
N-Type |
Arsenic / Antimony / (Red) Phosphorus |
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Thickness |
150 ~ 1500um, Customizable |
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Surface |
Ingot / As Cut / Lapped / Etched / Polished |
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Float Zone FZ-Silicon Specification |
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Parameter |
Conduction Type |
Orientation |
Diameter(mm) |
Resistivity(Ω.cm) |
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High Resistivity |
P-Type |
<100>&<111> |
125-200 |
>1000 |
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Neutron Radiation |
30-800 |
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CFZ |
N-Type |
1-50 |
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Meteorological Adulteration |
0.01-300 |
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(Magnet) Czochralski MCZ/CZ-Silicon Specification |
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Parameter |
Conduction Type |
Orientation |
Diameter(mm) |
Resistivity(Ω.cm) |
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Light Dopant |
P-Type |
<100><111> |
76.2-300 |
1-100 |
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Heavy Dopant |
N-Type |
0.0005-1 |
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